www.goodark.com page 1 of 5 rev.1.1 ssf 6010 a 60v n-channel mosfet absolute maximum ratings parameter max. units i d @t c =25? c continuous drain current,vgs@10v 75 i d @t c =100?c continuous drain current,vgs@10v 45 i dm pulsed drain current 300 a power dissipation 144 w p d @t c =25?c linear derating factor 0.74 w/? c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 220 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range C55 to +175 ?c thermal resistance parameter min. typ. max. units r jc junction-to-case 1.04 r ja junction-to-ambient 62 ?c/w electrical characteristics @t j =25 ?c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 60 v v gs =0v,i d =250a r ds(on) static drain-to-source on-resistance 8 10 m v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs ,i d =250a g fs forward transconductance 58 s v ds =5v,i d =30a 2 v ds =60v,v gs =0v i dss drain-to-source leakage current 10 a v ds =60v, v gs =0v,t j =150?c gate-to-source forward leakage 100 v gs =20v i gss gate-to-source reverse leakage -100 na v gs =-20v SSF6010A top view (d2pak) id =75a bv=60v r ds (on) =8m (typ.) features ? advanced trench process technology ? avalanche energy, 100% test ? fully characterized avalanche voltage and current ? lead free product description the SSF6010A is a new generation of middle voltage and high current nCchannel enhancement mode trench power mosfet. this new technology increases the device reliability and electrical parameter repeatability. SSF6010A is assembled in high reliability and qualified assembly house. applications ? power switching application
www.goodark.com page 2 of 5 rev.1.1 ssf 6010 a 60v n-channel mosfet q g total gate charge 45 q gs gate-to-source charge 4.2 q gd gate-to-drain("miller") charge 15 nc i d =30a v dd =30v v gs =10v t d(on) turn-on delay time 14.6 t r rise time 14.2 t d(off) turn-off delay time 40 t f fall time 7.3 ns v dd =30v i d =2a ,r l =15 r g =2.5 v gs =10v c iss input capacitance 1480 c oss output capacitance 190 c rss reverse transfer capacitance 135 pf v gs =0v v ds =25v f=1.0mhz source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) 75 i sm pulsed source current (body diode) 300 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.3 v t j =25?c,i s =40a,v gs =0v t rr reverse recovery time 33 ns q rr reverse recovery charge 61 nc t j =25?c,i f =60a di/dt=100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) gate charge test circuit eas test circuit notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, vdd = 30v,id=37a. pulse width300s, duty cycle1.5% ; rg = 25?? starting t j = 25c.
www.goodark.com page 3 of 5 rev.1.1 ssf 6010 a 60v n-channel mosfet transfer characteristic capacitance on resistance vs. junction temperature breakdown voltage vs. junction temperature switch waveforms switch time test circuit
www.goodark.com page 4 of 5 rev.1.1 ssf 6010 a 60v n-channel mosfet gate charge source-drain diode forward voltage safe operation area max drain current vs. junction temperature transient thermal impedance curve
www.goodark.com page 5 of 5 rev.1.1 ssf 6010 a 60v n-channel mosfet to263 d2pak mechanical data
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